Radiation Detection by Liquid Phase Epitaxially Grown InSb Detector
Author(s) -
Ikuo Kanno,
Yasunari Morita,
Yuki Sato,
A. Birumachi,
Tatsuya Nakamura,
M. Katagiri
Publication year - 2011
Publication title -
progress in nuclear science and technology
Language(s) - English
Resource type - Journals
ISSN - 2185-4823
DOI - 10.15669/pnst.1.214
Subject(s) - epitaxy , detector , radiation , liquid phase , materials science , phase (matter) , optoelectronics , physics , optics , nanotechnology , layer (electronics) , thermodynamics , quantum mechanics
A radiation detector was fabricated with an epitaxially grown InSb crystal. The resistivity of the epitaxial crystal was 1.5 orders of magnitude higher than that of substrate crystal, on the other hand, the Hall mobility was smaller. The resistance of the InSb detector showed highest value among the previously fabricated ones. Pulses induced by alpha particles were observed, however, proper energy spectrum was not obtained, due to the poor charge collection brought by the small Hall mobility.
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