Calculation of Electron Mobility in WZ-AlN and ZB-AlN at Low Electric Field | Zendy

Hadi Arabshahi | Zendy; Morteza Izadifard | Zendy; Amin Karimi | Zendy

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Calculation of Electron Mobility in WZ-AlN and ZB-AlN at Low Electric Field

Author(s) -

Hadi Arabshahi,

Morteza Izadifard,

Amin Karimi

Publication year - 2012

Publication title -

greener journal of science engineering and technological research

Language(s) - English

Resource type - Journals

ISSN - 2276-7835

DOI - 10.15580/gjsetr.2012.3.10031275

Subject(s) - electric field , electron , materials science , electron mobility , field (mathematics) , condensed matter physics , physics , optoelectronics , quantum mechanics , mathematics , pure mathematics

In this work the electron mobility of AlN Wurtzite and AlN Zincblende semiconductor compounds were calculated using iterative method in range of 100-600 K. We compare polar optic phonon scattering, deformation-potential acoustic phonon scattering, piezoelectric scattering and impurity scattering mechanisms. Boltzmann transport equation was solved using iterative method. In addition, we took into account the mixing of wave functions and electron screening and we investigated temperature dependence of mobility of the given compound.

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