One and Two-Dimensional Pattern Formation on Ion Sputtered Silicon | Zendy

Ari-David Brown | Zendy; H. George | Zendy; Michael J. Aziz | Zendy; Jonah Erlebacher | Zendy

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One and Two-Dimensional Pattern Formation on Ion Sputtered Silicon

Author(s) -

Ari-David Brown,

H. George,

Michael J. Aziz,

Jonah Erlebacher

Publication year - 2003

Publication title -

mrs proceedings

Language(s) - English

Resource type - Journals

eISSN - 1946-4274

pISSN - 0272-9172

DOI - 10.1557/proc-792-r7.8

Subject(s) - materials science , perpendicular , ion , degree celsius , ion beam , sputtering , collimated light , silicon , range (aeronautics) , beam (structure) , atomic physics , optics , thin film , optoelectronics , nanotechnology , composite material , physics , geometry , laser , mathematics , quantum mechanics , thermodynamics

The evolution of surface morphology during ion beam erosion of Si(111) at glancing ion incidence (60 o from normal, 500 eV Ar + , 0.75 mA/cm 2 collimated beam current) was studied over a temperature range of 500-730 o Celsius. Keeping ion flux, incident angle, and energy fixed, it was found that one-dimensional sputter ripples with wavevector oriented perpendicular to the projected ion beam direction form during sputtering at the lower end of the temperature range. For temperatures above approximately 690 o Celsius, growth modes both parallel and perpendicular to the projected ion beam direction contribute to the surface morphological evolution. This effect leads to the formation of bumps (“dots”) with nearly rectangular symmetry.

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