Hole Drift-Mobility Measurements in Contemporary Amorphous Silicon | Zendy

Steluta Dinca | Zendy; G. Ganguly | Zendy; Zhuo Lu | Zendy; E. A. Schiff | Zendy; Vasilios Vlahos | Zendy; C. R. Wroński | Zendy; Quan Yuan | Zendy

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Hole Drift-Mobility Measurements in Contemporary Amorphous Silicon

Author(s) -

Steluta Dinca,

G. Ganguly,

Zhuo Lu,

E. A. Schiff,

Vasilios Vlahos,

C. R. Wroński,

Quan Yuan

Publication year - 2003

Publication title -

mrs proceedings

Language(s) - English

Resource type - Journals

eISSN - 1946-4274

pISSN - 0272-9172

DOI - 10.1557/proc-762-a7.1

Subject(s) - materials science , amorphous silicon , valence band , drift velocity , silicon , electron mobility , valence (chemistry) , amorphous solid , analytical chemistry (journal) , optoelectronics , electric field , band gap , crystallography , crystalline silicon , physics , chemistry , quantum mechanics , chromatography

Department of Physics, Syracuse University, Syracuse, NY 13244-1130 1 BP Solar, Inc., Toano, Virgina 23168 2 Department of Electrical Engineering, Pennsylvania State University, University Park, Pennsylvania 18702 We present hole drift-mobility measurements on hydrogenated amorphous silicon from several laboratories. These temperature-dependent measurements show significant variations of the hole mobility for the differing samples. Under standard conditions (displacement/field ratio of 2×10 cm/V), hole mobilities reach values as large as 0.01 cm/Vs at room-temperature; these values are improved about tenfold over drift-mobilities of materials made a decade or so ago. The improvement is due partly to narrowing of the exponential bandtail of the valence band, but there is presently little other insight into how deposition procedures affect the hole driftmobility.

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