Open AccessContact resistivity of Al/Ti ohmic contacts on p-type ion implanted 4H- and 6H-SiC.
Author(s) -
Roberta Nipoti,
F. Moscatelli,
A. Scorzoni,
Antonella Poggi,
G.C. Cardinali,
Mihai Lazar,
Christophe Raynaud,
Dominique Planson,
M.-L. Locatelli,
Jean-Pierre Chante
Publication year - 2002
Publication title -
mrs proceedings
Language(s) - English
Resource type - Journals
eISSN - 1946-4274
pISSN - 0272-9172
DOI - 10.1557/proc-742-k6.2
Subject(s) - ohmic contact , electrical resistivity and conductivity , materials science , thermionic emission , contact resistance , wafer , current crowding , analytical chemistry (journal) , composite material , optoelectronics , electrical engineering , chemistry , current (fluid) , electron , physics , layer (electronics) , quantum mechanics , engineering , chromatography
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