Spontaneous Pattern Formation from Focused and Unfocused Ion Beam Irradiation | Zendy

Alexandre Cuenat | Zendy; Michael J. Aziz | Zendy

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Spontaneous Pattern Formation from Focused and Unfocused Ion Beam Irradiation

Author(s) -

Alexandre Cuenat,

Michael J. Aziz

Publication year - 2001

Publication title -

mrs proceedings

Language(s) - English

Resource type - Journals

eISSN - 1946-4274

pISSN - 0272-9172

DOI - 10.1557/proc-696-n2.8

Subject(s) - materials science , irradiation , ion , ion beam , sputtering , enhanced data rates for gsm evolution , instability , focused ion beam , atomic physics , nanotechnology , thin film , nuclear physics , physics , mechanics , telecommunications , quantum mechanics , computer science

We study the formation and self-organization of “ripples” and “dots” spontaneously appearing during uniform irradiation of Si, Ge, and GaSb with energetic ion beams. Features have been produced both with sub-keV unfocused Ar + ions and with a 30 keV Ga + Focused Ion Beam. We follow the evolution of features from small amplitude to “nanospikes” with increasing ion dose. It appears that the edge of the sputtered region influences the patterns formed, an effect that may make it possible to guide the self-organization by the imposition of lateral boundary conditions on the sputter instability.

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