Model for Dopant and Impurity Segregation During Vapor Phase Growth | Zendy

Craig B. Arnold | Zendy; Michael J. Aziz | Zendy

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Model for Dopant and Impurity Segregation During Vapor Phase Growth

Author(s) -

Craig B. Arnold,

Michael J. Aziz

Publication year - 2000

Publication title -

mrs proceedings

Language(s) - English

Resource type - Journals

eISSN - 1946-4274

pISSN - 0272-9172

DOI - 10.1557/proc-648-p3.11

Subject(s) - materials science , diffusion , vapor phase , impurity , dopant , phase (matter) , kinetic energy , surface (topology) , surface diffusion , thermodynamics , chemical physics , doping , chemistry , physics , geometry , optoelectronics , organic chemistry , mathematics , adsorption , quantum mechanics

We propose a new kinetic model for surface segregation during vapor phase growth that takes into account multiple mechanisms for segregation, including mechanisms for inter-layer exchange and surface diffusion. The resulting behavior of the segregation length shows temperature and velocity dependence, both of which have been observed in experiments. We compare our analytic model to experimental measurements for segregation of Phosphorus in Si(001), and we find an excellent agreement using realistic energies and pre-exponential factors for kinetic rate constants.

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