Open AccessDefect Diffusion During Annealing of Low-Energy Ion-Implanted Silicon
Author(s) -
P. Bedrossian,
M.J. Caturla,
T. Dı́az de la Rubia
Publication year - 1996
Publication title -
mrs proceedings
Language(s) - English
Resource type - Journals
eISSN - 1946-4274
pISSN - 0272-9172
DOI - 10.1557/proc-438-715
Subject(s) - materials science , annealing (glass) , silicon , ion , crystallographic defect , chemical physics , diffusion , molecular physics , atomic physics , optoelectronics , crystallography , thermodynamics , composite material , chemistry , physics , organic chemistry
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