Direct correlation of R-line luminescence with rod-like defect evolution in ion-implanted and annealed silicon
Author(s) -
Supakit Charnvanichborikarn,
J. WongLeung,
C. Jagadish,
J. S. Williams
Publication year - 2012
Publication title -
mrs communications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.751
H-Index - 31
eISSN - 2159-6859
pISSN - 2159-6867
DOI - 10.1557/mrc.2012.17
Subject(s) - materials science , luminescence , annealing (glass) , photoluminescence , silicon , dopant , transmission electron microscopy , impurity , ion implantation , crystallographic defect , analytical chemistry (journal) , spectroscopy , optoelectronics , ion , molecular physics , doping , crystallography , nanotechnology , composite material , chemistry , physics , organic chemistry , chromatography , quantum mechanics
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom