z-logo
open-access-imgOpen Access
Direct correlation of R-line luminescence with rod-like defect evolution in ion-implanted and annealed silicon
Author(s) -
Supakit Charnvanichborikarn,
J. WongLeung,
C. Jagadish,
J. S. Williams
Publication year - 2012
Publication title -
mrs communications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.751
H-Index - 31
eISSN - 2159-6859
pISSN - 2159-6867
DOI - 10.1557/mrc.2012.17
Subject(s) - materials science , luminescence , annealing (glass) , photoluminescence , silicon , dopant , transmission electron microscopy , impurity , ion implantation , crystallographic defect , analytical chemistry (journal) , spectroscopy , optoelectronics , ion , molecular physics , doping , crystallography , nanotechnology , composite material , chemistry , physics , organic chemistry , chromatography , quantum mechanics

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom