Density-controlled growth of aligned ZnO nanowire arrays by seedless chemical approach on smooth surfaces
Author(s) -
Sheng Xu,
Changshi Lao,
Benjamin Weintraub,
Zhong Lin Wang
Publication year - 2008
Publication title -
journal of materials research/pratt's guide to venture capital sources
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.788
H-Index - 148
eISSN - 0884-2914
pISSN - 0884-1616
DOI - 10.1557/jmr.2008.0274
Subject(s) - materials science , nanowire , substrate (aquarium) , nanotechnology , semiconductor , field effect transistor , optoelectronics , transistor , oceanography , voltage , geology , physics , quantum mechanics
A novel ZnO seedless chemical approach for density-controlled growth of ZnO nanowire (NW) arrays has been developed. The density of ZnO NWs is controlled by changing the precursor concentration. Effects of both growth temperature and growth time are also investigated. By this novel synthesis technique, ZnO NW arrays can grow on any substrate (polymer, glass, semiconductor, metal, and more) as long as the surface is smooth. This technique represents a new, low-cost, time-efficient, and scalable method for fabricating ZnO NW arrays for applications in field emission, vertical field effect transistor arrays, nanogenerators, and nanopiezotronics.
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom