Open AccessThin SiO2 coating on ZnS phosphors for improved low-voltage cathodoluminescence properties
Author(s) -
W. Park,
B. K. Wagner,
G.J. Russell,
K. Yasuda,
Christopher J. Summers,
Young Rag,
Ha-Young Yang
Publication year - 2000
Publication title -
journal of materials research/pratt's guide to venture capital sources
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.788
H-Index - 148
eISSN - 0884-2914
pISSN - 0884-1616
DOI - 10.1557/jmr.2000.0328
Subject(s) - cathodoluminescence , materials science , phosphor , coating , voltage , analytical chemistry (journal) , low voltage , chemical engineering , optoelectronics , composite material , luminescence , chromatography , chemistry , physics , quantum mechanics , engineering
A significant improvement (40–60%) was reported in the low voltage (100–1000V) cathodoluminescence efficiency of ZnS phosphors coated with SiO 2 by the sol-gel technique. The properties of the coatings were found to be critically dependent upon the precursor concentration, pH value and the temperature of the solution with optimum performance being obtained for a SiO 2 concentration of 1.0 wt%, pH values between 7–9, and a solution temperature of 83 °C. The efficiency curves exhibited a characteristic voltage dependence which was analyzed by a one-dimensional numerical model. Enhanced low voltage efficiency was attributed to a reduction of surface recombination and the actual shape of the efficiency curve was determined by the interplay between the reduction of surface recombination and energy losses in the SiO 2 coating.
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