Physical properties of amorphous silicon-carbon alloys produced by different techniques
Author(s) -
A. Carbone,
F. Demichelis,
G. Kaniadakis,
G. Della Mea,
F.L. Freire,
P. Rava
Publication year - 1990
Publication title -
journal of materials research/pratt's guide to venture capital sources
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.788
H-Index - 148
eISSN - 0884-2914
pISSN - 0884-1616
DOI - 10.1557/jmr.1990.2877
Subject(s) - materials science , sputtering , silicon , glow discharge , carbon fibers , amorphous solid , amorphous silicon , silicon carbide , analytical chemistry (journal) , hydrogen , electrical resistivity and conductivity , deposition (geology) , chemical engineering , thin film , metallurgy , composite material , nanotechnology , crystallography , crystalline silicon , plasma , composite number , chemistry , engineering , biology , chromatography , quantum mechanics , physics , organic chemistry , sediment , electrical engineering , paleontology
Results of a study of compositional, optical, electrical, and structural properties of hydrogen amorphous silicon carbide (a-SiC:H) prepared, respectively, by glow-discharge (GD) and reactive sputtering (SP) techniques at power densities varying between 1.25 · 10−2 and 1.25 · 10−1 W · cm−2 for GD samples are presented. Measurements are reported on the composition, optical and IR spectroscopy, and on the temperature dependence of electrical conductivity. All experimental observations suggest that the power density only slightly affects the physical properties of GD silicon-rich samples, whereas those of the carbon-rich SP samples depend more strongly on this deposition parameter. Finally, it is shown that the GD technique can provide films with better characteristics, whereas samples of similar composition prepared by sputtering have higher compositional disorder and are more inhomogeneous
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