Effect of nonstoichiometric defects and Cr ions on the photoconductivity of Bi12SiO20 crystals
Author(s) -
T. V. Panchenko,
L. M. Karpova
Publication year - 2020
Publication title -
journal of physics and electronics
Language(s) - English
Resource type - Journals
eISSN - 2664-3626
pISSN - 2616-8685
DOI - 10.15421/332005
Subject(s) - photoconductivity , ion , annealing (glass) , materials science , oxygen , analytical chemistry (journal) , crystallography , optoelectronics , chemistry , metallurgy , organic chemistry , chromatography
The results of an experimental study of the effect of nonstoichiometric defects in oxygen and the Bi:Si ratio, as well as Cr ions, on the photoconductivity of Bi12SiO20 crystals are presented. It is shown that varying the annealing conditions allows one to modify the spectral distribution and quantitative characteristics of photoconductivity substantially.
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