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Silicon Carbide (SiC) is a wide bandgap material with unique properties attractive for high power, high temperature applications. The presence of defects in the crystal is a major issue prior device fabrication. These defects affect the performance of the device. To delineate and identify the defects an easy and quick method is desirable. In this study defects delineation in n-type 4H-SiC has been carried out by KOH, KOH+NaOH and KOH+Na2O2 melts. Variation in etch pits size was found at various concentrations of the NaOH in KOH and for different total etching times in the KOH+Na2O2 melt. The eutectic solution etching technique is found to be more efficient to delineate defects and provides control on etching and surface roughness. The etching rates have been estimated under different experimental conditions. Detailed morphological investigations have been performed by wide field high resolution optical microscopy and scanning electron microscopy.

Study of Eutectic Etching Process for Defects Analysis in n type 4H SiC