Effect of Collector Voltage on the Large and Small Signal Modulation Characteristics of 980 nm Transistor Laser | Zendy

R. Ramya | Zendy; S. Piramasubramanian | Zendy; M. Ganesh Madhan | Zendy; D. Rebecca | Zendy

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Effect of Collector Voltage on the Large and Small Signal Modulation Characteristics of 980 nm Transistor Laser

Author(s) -

R. Ramya,

S. Piramasubramanian,

M. Ganesh Madhan,

D. Rebecca

Publication year - 2020

Publication title -

defence science journal

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.198

H-Index - 32

eISSN - 0976-464X

pISSN - 0011-748X

DOI - 10.14429/dsj.70.16341

Subject(s) - materials science , voltage , optoelectronics , transistor , electrical engineering , common emitter , bandwidth (computing) , current (fluid) , laser , optics , physics , engineering , telecommunications

Theoretical analysis of Transistor Laser is carried out and the static and frequency responses for different collector voltages, under common emitter configuration are determined. The threshold current (Ith) is observed as 33mA and it increases linearly with reverse collector to base voltage (VCB). Meanwhile, the output optical power is found to decrease proportionately when VCB is increased. A maximum of 18.7GHz modulation bandwidth is observed when an input base current of 95 mA is applied at a fixed value of VCB (1V). The modulation bandwidth is found to decrease with increase in reverse VCB. The turn on delay increases with collector voltage. However, it decreases with increase in base current.

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