Open AccessPerformance Analysis of GaN/AlGaN HEMTs Passivation using Inductively Coupled Plasma Chemical Vapour Deposition and Plasma Enhanced Chemical Vapour Deposition Techniques
Author(s) -
Sunil Kumar,
Amit Malik,
D. S. Rawal,
Seema Vinayak,
Hitendra K. Malik
Publication year - 2018
Publication title -
defence science journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.198
H-Index - 32
eISSN - 0976-464X
pISSN - 0011-748X
DOI - 10.14429/dsj.68.12329
Subject(s) - passivation , plasma enhanced chemical vapor deposition , high electron mobility transistor , materials science , optoelectronics , saturation current , plasma , breakdown voltage , inductively coupled plasma , chemical vapor deposition , gallium nitride , analytical chemistry (journal) , deposition (geology) , transistor , layer (electronics) , voltage , electrical engineering , nanotechnology , chemistry , paleontology , physics , engineering , quantum mechanics , chromatography , sediment , biology
In the present paper SiN thin film has been studied as a passivation layer and its effect on AlGaN/GaN HEMTs is investigated using two different deposition techniques i.e PECVD and ICPCVD. AlGaN/GaN HEMTs devices passivated with optimised SiN film have delivered lower gate leakage current (from μA to nA). Device source drain saturation current (Ids) increased from 400mA/mm to ~550 A/mm and the peak extrinsic trans-conductance increased from 100 mS/mm to 170 mS/mm for a 0.8 μm HEMT device. The optimised SiN passivation process has resulted in reduced current collapse and increased breakdown voltage for HEMT devices.
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom