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Amorphous silicon carbide is known as a material resistant except other influences also against radiation. This study investigates the effects of the neutron radiation on electrical characteristics (I-V characteristic, impedance spectra and obtained dynamic parameters of AC equivalent circuit) of solar cell a-SiC/c-Si heterojunction structure. The heterojunction structure was irradiated using neutrons with neutron fluency 10 cm. Existence of neutron induced structural defects, which could be introduced within the semiconductor structure of heterojunction, has been illustrated using DC and AC analyses. The structural defects induced by neutron particle radiation affect mainly the trapping mechanism. The process results in the changes of electronic elements are included into the proposed equivalent circuit.

ASSESMENT OF DAMAGE OF SOLAR HETEROJUNCTION a-SiC/c-Si INDUCED BY NEUTRON RADIATION