Numerical Simulation of Nanoscale Double-Gate MOSFETs | Zendy

R. Stenzel | Zendy; Lilac Muller | Zendy; T. Herrmann | Zendy; W. Klix | Zendy

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Numerical Simulation of Nanoscale Double-Gate MOSFETs

Author(s) -

R. Stenzel,

Lilac Muller,

T. Herrmann,

W. Klix

Publication year - 2006

Publication title -

acta polytechnica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.207

H-Index - 15

eISSN - 1805-2363

pISSN - 1210-2709

DOI - 10.14311/876

Subject(s) - mosfet , nanoscopic scale , materials science , doping , computer simulation , gate oxide , optoelectronics , channel (broadcasting) , and gate , logic gate , electronic engineering , nanotechnology , computer science , electrical engineering , simulation , engineering , voltage , transistor

The further improvement of nanoscale electron devices requires support by numerical simulations within the design process. After a brief description of our SIMBA 2D/3D-device simulator, the results of the simulation of DG-MOSFETs are represented. Starting from a basic structure with a gate length of 30 nm, the model parameters were calibrated on the basis measured values from the literature. Afterwards variations in of gate length, channel thickness and doping, gate oxide parameters and source/drain doping were made in connection with numerical calculation of the device characteristics. Then a DG-MOSFET with a gate length of 15 nm was optimized. The optimized structure shows suppressed short channel behavior and short switching times of about 0.15 ps.

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