2.45 GHz Class E Power Amplifier for a Transmitter Combining LINC and EER | Zendy

M. Dirix | Zendy; O. Koch | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

2.45 GHz Class E Power Amplifier for a Transmitter Combining LINC and EER

Author(s) -

M. Dirix,

O. Koch

Publication year - 2009

Publication title -

acta polytechnica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.207

H-Index - 15

eISSN - 1805-2363

pISSN - 1210-2709

DOI - 10.14311/1137

Subject(s) - amplifier , transmitter , high electron mobility transistor , dbm , electrical engineering , rf power amplifier , power (physics) , electronic engineering , modulation (music) , engineering , computer science , optoelectronics , physics , topology (electrical circuits) , materials science , telecommunications , transistor , acoustics , cmos , voltage , channel (broadcasting) , quantum mechanics

A 10 W class-E RF power amplifier (PA) is designed and fabricated using a Cree GaN HEMT. The proposed PA uses an innovative input circuit to optimize band with. At 2.45 GHz the PA achieves a PAE of 60 % at an outputpower of 40 dBm. The resulting amplifier is simulated and constructed using a transmissionline topology. Two of these amplifiers are fabricated on a single board for outphasing application. Their suitability for outphasing application and supply modulation is investigated.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research