Analysis of Subthreshold Transmission Characteristics for Gate Voltage and Doping Profiles of Asymmetric Double Gate MOSFET | Zendy

Hakkee Jung | Zendy

Open Access

Analysis of Subthreshold Transmission Characteristics for Gate Voltage and Doping Profiles of Asymmetric Double Gate MOSFET

Author(s) -

Hakkee Jung

Publication year - 2015

Publication title -

international journal of control and automation

Language(s) - English

Resource type - Journals

eISSN - 2207-6387

pISSN - 2005-4297

DOI - 10.14257/ijca.2015.8.3.05

Subject(s) - subthreshold conduction , mosfet , transmission gate , gate voltage , electrical engineering , materials science , threshold voltage , voltage , optoelectronics , transmission (telecommunications) , electronic engineering , transistor , engineering

This study is to analyze the subthreshold transmission characteristics for the change of gate voltage of asymmetric double gate MOSFET. Asymmetric double gate MOSFET has the advantage of reducing short channel effects by controlling current flow by top/bottom gate voltage. Hermeneutical potential distributions were obtained by using Poisson’s equation to analyze transmission characteristics by top/bottom gate voltage. Gaussian function was used as charge distribution. In order to analyze off-current and subthreshold swing, hermeneutic potential distributions were used. In conclusion, it was found that off-current depended on electron concentration affecting current flow, and subthreshold swing depended on the conduction path. Therefore, transmission characteristics of subthreshold were greatly affected by top/bottom gate voltage, which should be considered designing asymmetric double gate MOSFET.

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