Three-dimensional band diagram in lateral polarity junction III-nitride heterostructures | Zendy

Wei Guo | Zendy; Somak Mitra | Zendy; Jie’an Jiang | Zendy; Houqiang Xu | Zendy; Moheb Sheikhi | Zendy; Haiding Sun | Zendy; Kangkai Tian | Zendy; ZiHui Zhang | Zendy; Haibo Jiang | Zendy; Iman S. Roqan | Zendy; Xiaohang Li | Zendy; Jichun Ye | Zendy

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Three-dimensional band diagram in lateral polarity junction III-nitride heterostructures

Author(s) -

Wei Guo,

Somak Mitra,

Jie’an Jiang,

Houqiang Xu,

Moheb Sheikhi,

Haiding Sun,

Kangkai Tian,

ZiHui Zhang,

Haibo Jiang,

Iman S. Roqan,

Xiaohang Li,

Jichun Ye

Publication year - 2019

Publication title -

optica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 5.074

H-Index - 107

ISSN - 2334-2536

DOI - 10.1364/optica.6.001058

Subject(s) - heterojunction , band diagram , polarity (international relations) , quantum well , condensed matter physics , electron , polarization (electrochemistry) , diagram , polar , phase diagram , electronic band structure , quantum , materials science , physics , chemistry , optics , quantum mechanics , biochemistry , cell , laser , statistics , mathematics , phase (matter)

The 2D band diagram comprising out-of-plane potentials has been ubiquitously utilized for III-nitride heterostructures. Here, we propose the 3D band diagram based on unambiguous evidences in luminescence and carrier dynamics for lateral polarity junction quantum wells: although electrons and holes are separated out-of-plane in quantum wells by polarization, different band diagram heights lead to secondary carrier injection in-plane, causing electrons to transport from the III- to N-polar domains to recombine with holes therein with large wavefunction overlap. We also show that utilization of the 3D band diagram can be extended to single-polarity structures to analyze carrier transport and dynamics, providing new dimensions for accurate optical device design.

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