Raman amplification and lasing in SiGe waveguides | Zendy

R. Claps | Zendy; Varun Raghunathan | Zendy; Ozdal Boyraz | Zendy; Prakash Koonath | Zendy; D. Dimitropoulos | Zendy; Bahram Jalali | Zendy

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Raman amplification and lasing in SiGe waveguides

Author(s) -

R. Claps,

Varun Raghunathan,

Ozdal Boyraz,

Prakash Koonath,

D. Dimitropoulos,

Bahram Jalali

Publication year - 2005

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/opex.13.002459

Subject(s) - lasing threshold , raman amplification , materials science , raman spectroscopy , optics , waveguide , silicon , raman scattering , optoelectronics , germanium , silicon photonics , physics , wavelength

We describe the first observation of spontaneous Raman emission, stimulated amplification, and lasing in a SiGe waveguide. A pulsed optical gain of 16dB and a lasing threshold of 25 W peak pulse power (20 mW average) is observed for a Si1-xGex waveguide with x=7.5%. At the same time, a 40 GHz frequency downshift is observed in the Raman spectrum compared to that of a silicon waveguide. The spectral shift can be attributed to the combination of composition- and strain-induced shift in the optical phonon frequency. The prospect of Germanium-Silicon-on-Oxide as a flexible Raman medium is discussed.

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