Influence of nonlinear absorption on Raman amplification in Silicon waveguides | Zendy

R. Claps | Zendy; Varun Raghunathan | Zendy; Dimitris Dimitropoulos | Zendy; Bahram Jalali | Zendy

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Influence of nonlinear absorption on Raman amplification in Silicon waveguides

Author(s) -

R. Claps,

Varun Raghunathan,

Dimitris Dimitropoulos,

Bahram Jalali

Publication year - 2004

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/opex.12.002774

Subject(s) - raman amplification , raman spectroscopy , materials science , optics , absorption (acoustics) , attenuation coefficient , net gain , free carrier absorption , silicon , amplifier , raman scattering , optical amplifier , optoelectronics , nonlinear optics , refractive index , free carrier , laser , physics , cmos

We model the TPA-induced free carrier absorption effect in silicon Raman amplifiers and quantify the conditions under which net gain may be obtained. The achievable Raman gain strongly depends on the free carrier lifetime, propagation loss, and on the effective Raman gain coefficient, through pump-induced broadening.

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