Double D-centers related donor-acceptor-pairs emission in fluorescent silicon carbide | Zendy

Yi Wei | Zendy; Abebe T. Tarekegne | Zendy; Haiyan Ou | Zendy

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Double D-centers related donor-acceptor-pairs emission in fluorescent silicon carbide

Author(s) -

Yi Wei,

Abebe T. Tarekegne,

Haiyan Ou

Publication year - 2018

Publication title -

optical materials express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.925

H-Index - 66

ISSN - 2159-3930

DOI - 10.1364/ome.9.000295

Subject(s) - fluorescence , materials science , silicon carbide , silicon , acceptor , optoelectronics , optics , physics , metallurgy , condensed matter physics

A new boron-induced deeper acceptor level (D*-center) different from the D-center in nitrogen-boron co-doped 6H fluorescent silicon carbide (f-SiC) is revealed by measuring the temperature-dependent photoluminescence (PL). The D*-center is correlated to the dominate donor-acceptor-pair (DAP) recombination at low temperature ranges in f-SiC with a PL peak around 1.90 eV. A hole-trap with an energy level that lies between the D*-center and the D-center is predicted to exist in the f-SiC samples. A two-step thermal ionization involving the hole-trap is proposed to explain the evolution of both D*-center and D-center related temperature-dependent DAP recombination.

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