InGaN/GaN ultraviolet LED with a graphene/AZO transparent current spreading layer | Zendy

Li Lin | Zendy; Ou Y | Zendy; Xiaolong Zhu | Zendy; Eugen Stamate | Zendy; Kaiyu Wu | Zendy; Liang Meng | Zendy; Zhiqiang Liu | Zendy; Xiaoyan Yi | Zendy; Berit Herstrøm | Zendy; Anja Boisen | Zendy; Flemming Jensen | Zendy; Haiyan Ou | Zendy

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InGaN/GaN ultraviolet LED with a graphene/AZO transparent current spreading layer

Author(s) -

Li Lin,

Ou Y,

Xiaolong Zhu,

Eugen Stamate,

Kaiyu Wu,

Liang Meng,

Zhiqiang Liu,

Xiaoyan Yi,

Berit Herstrøm,

Anja Boisen,

Flemming Jensen,

Haiyan Ou

Publication year - 2018

Publication title -

optical materials express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.925

H-Index - 66

ISSN - 2159-3930

DOI - 10.1364/ome.8.001818

Subject(s) - materials science , optoelectronics , graphene , light emitting diode , ultraviolet , layer (electronics) , wide bandgap semiconductor , optics , nanotechnology , physics

We report an approach of using an interlayer of single layer graphene (SLG) for electroluminescence (EL) enhancement of an InGaN/GaN-based near-ultraviolet (NUV) light-emitting diode (LED) with an aluminum-doped zinc oxide (AZO)-based current spreading layer (CSL). AZO-based CSLs with and without a SLG interlayer were fabricated on the NUV LED epi-wafers. The current-voltage (I-V) characteristic and the EL intensity were measured and compared. We find that the LED without the SLG interlayer can possess a 40% larger series resistance. Furthermore, a 95% EL enhancement was achieved by the employment of the SLG interlayer.

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