Comparison of InGaAs and InAlAs sacrificial layers for release of InP-based devices | Zendy

J. O’Callaghan | Zendy; Ruggero Loi | Zendy; Enrica Mura | Zendy; Brendan Roycroft | Zendy; António José Trindade | Zendy; Kevin Thomas | Zendy; Agnieszka Gocalińska | Zendy; E. Pelucchi | Zendy; Jing Zhang | Zendy; Günther Roelkens | Zendy; Christopher A. Bower | Zendy; Brian Corbett | Zendy

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Comparison of InGaAs and InAlAs sacrificial layers for release of InP-based devices

Author(s) -

J. O’Callaghan,

Ruggero Loi,

Enrica Mura,

Brendan Roycroft,

António José Trindade,

Kevin Thomas,

Agnieszka Gocalińska,

E. Pelucchi,

Jing Zhang,

Günther Roelkens,

Christopher A. Bower,

Brian Corbett

Publication year - 2017

Publication title -

optical materials express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.925

H-Index - 66

ISSN - 2159-3930

DOI - 10.1364/ome.7.004408

Subject(s) - materials science , optoelectronics , gallium arsenide , indium gallium arsenide , optics , physics

Heterogeneous integration of InP devices to Si substrates by adhesive-less micro transfer printing requires flat surfaces for optimum attachment and thermal sinking. InGaAs and InAlAs sacrificial layers are compared for the selective undercut of InP coupons by FeCl3:H2O (1:2). InAlAs offers isotropic etches and superior selectivity (> 4,000) to InP when compared with InGaAs. A 500 nm thick InAlAs sacrificial layer allows the release of wide coupons with a surface roughness < 2 nm and a flatness < 20 nm. The InAlAs release technology is applied to the transfer printing of a pre-fabricated InP laser to a Si substrate

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