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Monoclinic gallium oxide thin films were grown on (0001) sapphire at various substrate temperatures ranging from 400 to 1000 °C by pulsed laser deposition using a KrF excimer laser. The structural, optical and compositional properties of the films were analyzed by using x-ray diffraction, transmission electron microscopy, optical transmittance, and Rutherford backscattering spectroscopy. As the substrate temperature was increased to 800 °C, the gallium oxide film possesses single crystalline phase with a preferred growth orientation of (−201) plane and higher crystal quality than those at the other temperatures. Optical transmittance measurements reveal the films grown at 600-1000 °C exhibit a clear absorption edge at the deep ultraviolet region around 250 nm wavelength. Based on the results of Rutherford backscattering spectroscopy, the O/Ga ratio of gallium oxide film increased gradually with increasing substrate temperature. When the substrate temperature was raised to 800-1000 °C, the film composition was close to the formation of Ga2O3, indicating the O vacancies and defects were reduced. Furthermore, the films grown at 600 and 800 °C were chosen to fabricate solar-blind metal-semiconductor-metal photodetectors. At an applied bias of 5 V, the photodetector prepared with 800 °C-grown film has a lower dark current of 1.2 × 10−11 A and a higher responsivity of 0.903 A/W (at a wavelength of 250 nm) than those with 600 °C-grown films. The better device performance is ascribed to the higher crystal quality and fewer O vacancies in the 800 °C-grown film. Moreover, the results indicate the gallium oxide films presented in this study have high potential for deep ultraviolet photodetector applications.

Pulsed laser deposition of gallium oxide films for high performance solar-blind photodetectors