Analysis of TM mode light extraction efficiency enhancement for deep ultraviolet AlGaN quantum wells light-emitting diodes with III-nitride micro-domes | Zendy

Peng Zhao | Zendy; Lu Han | Zendy; Matthew R. McGoogan | Zendy; Hongping Zhao | Zendy

Open Access

Analysis of TM mode light extraction efficiency enhancement for deep ultraviolet AlGaN quantum wells light-emitting diodes with III-nitride micro-domes

Author(s) -

Peng Zhao,

Lu Han,

Matthew R. McGoogan,

Hongping Zhao

Publication year - 2012

Publication title -

optical materials express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.925

H-Index - 66

ISSN - 2159-3930

DOI - 10.1364/ome.2.001397

Subject(s) - light emitting diode , materials science , optoelectronics , quantum efficiency , nitride , diode , quantum well , ultraviolet , gallium nitride , spontaneous emission , optics , layer (electronics) , laser , composite material , physics

Analysis of transverse magnetic (TM) mode light extraction efficiency enhancement for AlGaN quantum wells (QWs) based deep ultraviolet (UV) light-emitting diodes (LEDs) with III-nitride micro-hemisphere and micro-dome structures on the p-type layer are studied and compared to that of the conventional deep-UV LEDs with flat surface. The transverse electric (TE) and TM components of the spontaneous emission of AlGaN QWs with AlN barriers were calculated by using a self-consistent 6-band k∙p method, which shows the TM component overtakes the TE component and becomes the dominant contribution of the spontaneous emission when the Al-content of the AlGaN QWs is larger than 0.66. The TM mode light extraction efficiency of the deep-UV LEDs emitting at 250 nm with AlGaN micro-domes as compared to the conventional LEDs with flat surface is calculated based on three dimensional finite difference time domain (3D-FDTD) method. The effects of the III-nitride micro-dome diameter and height as well as the p-type layer thickness on the light extraction efficiency were comprehensively studied. The results indicate optimized light extraction efficiency enhancement (>7.3 times) of the dominant TM polarized spontaneous emission for deep-UV LEDs with III-nitride micro-domes.

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