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Dual-band fiber-chip grating coupler in a 300 mm silicon-on-insulator platform and 193 nm deep-UV lithography
Author(s) -
David GonzálezAndrade,
Diego PérezGalacho,
Miguel MontesinosBallester,
Xavier Le Roux,
Éric Cassan,
Delphine MarrisMorini,
Pavel Cheben,
Nathalie Vulliet,
S. Monfray,
F. Bœuf,
Laurent Vivien,
Aitor V. Velasco,
Carlos AlonsoRamos
Publication year - 2020
Publication title -
optics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.524
H-Index - 272
eISSN - 1071-2763
pISSN - 0146-9592
DOI - 10.1364/ol.414860
Subject(s) - materials science , optics , lithography , electron beam lithography , silicon on insulator , optoelectronics , fiber bragg grating , grating , photolithography , chip , immersion lithography , diffraction grating , silicon , resist , wavelength , physics , telecommunications , nanotechnology , layer (electronics) , computer science
Surface grating couplers are fundamental building blocks for coupling the light between optical fibers and integrated photonic devices. However, the operational bandwidth of conventional grating couplers is intrinsically limited by their wavelength-dependent radiation angle. The few dual-band grating couplers that have been experimentally demonstrated exhibit low coupling efficiencies and rely on complex fabrication processes. Here we demonstrate for the first time, to the best of our knowledge, the realization of an efficient dual-band grating coupler fabricated using 193 nm deep-ultraviolet lithography for 10 Gbit symmetric passive optical networks. The footprint of the device is 17×10µ m 2 . We measured coupling efficiencies of -4.9 and -5.2 d B with a 3-dB bandwidth of 27 and 56 nm at the wavelengths of 1270 and 1577 nm, corresponding to the upstream and downstream channels, respectively.

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