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Simultaneous quantum dash-well emission in a chirped dash-in-well superluminescent diode with spectral bandwidth >700 nm
Author(s) -
M. Z. M. Khan,
M. A. Majid,
Tien Khee Ng,
Dongkyu Cha,
Boon S. Ooi
Publication year - 2013
Publication title -
optics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.524
H-Index - 272
eISSN - 1071-2763
pISSN - 0146-9592
DOI - 10.1364/ol.38.003720
Subject(s) - superluminescent diode , optoelectronics , optics , bandwidth (computing) , amplified spontaneous emission , quantum well , spontaneous emission , dash , diode , quantum , physics , materials science , laser , telecommunications , computer science , quantum mechanics , operating system
We report on the quantitative evidence of simultaneous amplified spontaneous emission from the AlGaInAs/InAs/InP-based quantum-well (Qwell) and quantum-dashes (Qdash) in a multistack dash-in-an-asymmetric-well superluminescent diode heterostructure. As a result, an emission bandwidth (full width at half-maximum) of >700 nm is achieved, covering entire O-E-S-C-L-U communication bands, and a maximum continuous wave output power of 1.3 mW, from this device structure. This demonstration paves a way to bridge entire telecommunication bands through proper optimization of device gain region, bringing significant advances and impact to a variety of cross-disciplinary field applications.

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