Modulation of the absorption coefficient at 13 μm in Ge/SiGe multiple quantum well heterostructures on silicon | Zendy

L. Lever | Zendy; Y. Hu | Zendy; M. Myronov | Zendy; X. Liu | Zendy; N. Owens | Zendy; Frédéric Y. Gardes | Zendy; Igor P. Marko | Zendy; Stephen J. Sweeney | Zendy; Z. Ikonić | Zendy; D. R. Leadley | Zendy; Graham T. Reed | Zendy; R. W. Kelsall | Zendy

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Modulation of the absorption coefficient at 13 μm in Ge/SiGe multiple quantum well heterostructures on silicon

Author(s) -

L. Lever,

Y. Hu,

M. Myronov,

X. Liu,

N. Owens,

Frédéric Y. Gardes,

Igor P. Marko,

Stephen J. Sweeney,

Z. Ikonić,

D. R. Leadley,

Graham T. Reed,

R. W. Kelsall

Publication year - 2011

Publication title -

optics letters

Language(s) - English

Resource type - Journals

eISSN - 1071-2763

pISSN - 0146-9592

DOI - 10.1364/ol.36.004158

Subject(s) - attenuation coefficient , heterojunction , materials science , quantum well , absorption (acoustics) , optoelectronics , modulation (music) , optics , silicon , electro absorption modulator , stark effect , quantum confined stark effect , band gap , quantum dot , semiconductor , physics , spectral line , quantum dot laser , semiconductor laser theory , laser , astronomy , acoustics

We report modulation of the absorption coefficient at 1.3 μm in Ge/SiGe multiple quantum well heterostructures on silicon via the quantum-confined Stark effect. Strain engineering was exploited to increase the direct optical bandgap in the Ge quantum wells. We grew 9 nm-thick Ge quantum wells on a relaxed Si0.22Ge0.78 buffer and a contrast in the absorption coefficient of a factor of greater than 3.2 was achieved in the spectral range 1290-1315 nm.

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