Facet-embedded thin-film III–V edge-emitting lasers integrated with SU-8 waveguides on silicon | Zendy

Sabarni Palit | Zendy; Jeremy D. Kirch | Zendy; Mengyuan Huang | Zendy; L. J. Mawst | Zendy; N.M. Jokerst | Zendy

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Facet-embedded thin-film III–V edge-emitting lasers integrated with SU-8 waveguides on silicon

Author(s) -

Sabarni Palit,

Jeremy D. Kirch,

Mengyuan Huang,

L. J. Mawst,

N.M. Jokerst

Publication year - 2010

Publication title -

optics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.524

H-Index - 272

eISSN - 1071-2763

pISSN - 0146-9592

DOI - 10.1364/ol.35.003474

Subject(s) - materials science , laser , optoelectronics , optics , photolithography , waveguide , facet (psychology) , substrate (aquarium) , semiconductor laser theory , silicon , thin film , coupling loss , semiconductor , optical fiber , physics , nanotechnology , social psychology , oceanography , personality , big five personality traits , geology , psychology

A thin-film InGaAs/GaAs edge-emitting single-quantum-well laser has been integrated with a tapered multimode SU-8 waveguide onto an Si substrate. The SU-8 waveguide is passively aligned to the laser using mask-based photolithography, mimicking electrical interconnection in Si complementary metal-oxide semiconductor, and overlaps one facet of the thin-film laser for coupling power from the laser to the waveguide. Injected threshold current densities of 260A/cm(2) are measured with the reduced reflectivity of the embedded laser facet while improving single mode coupling efficiency, which is theoretically simulated to be 77%.

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