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Fabrication of low-loss silicon-on-oxidized-porous-silicon strip waveguide using focused proton-beam irradiation
Author(s) -
E. J. Teo,
Andrew A. Bettiol,
P. Y. Yang,
Mark B. H. Breese,
B. Q. Xiong,
Goran Z. Mashanovich,
William R. Headley,
Graham T. Reed
Publication year - 2009
Publication title -
optics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.524
H-Index - 272
eISSN - 1071-2763
pISSN - 0146-9592
DOI - 10.1364/ol.34.000659
Subject(s) - materials science , silicon , optics , porous silicon , optoelectronics , etching (microfabrication) , fluence , fabrication , irradiation , waveguide , nanotechnology , laser , medicine , physics , alternative medicine , layer (electronics) , pathology , nuclear physics
We have successfully fabricated low-loss silicon-on-oxidized-porous-silicon (SOPS) strip waveguides with high-index contrast using focused proton-beam irradiation and electrochemical etching. Smooth surface quality with rms roughness of 3.1 nm is achieved for a fluence of 1x10(15)/cm(2) after postoxidation treatment. Optical characterization at a wavelength of 1550 nm shows a loss of 1.1+/-0.4 dB/cm and 1.2+/-0.4 dB/cm in TE and TM polarization respectively, which we believe is the lowest reported loss for SOPS waveguides. This opens up new opportunities for all-silicon-based optoelectronics applications.

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