Enhancement of band-edge emission induced by defect transition in the composite of ZnO nanorods and CdSe/ZnS quantum dots | Zendy

Lin-Jie Tzeng | Zendy; Chung-Liang Cheng | Zendy; Yangfang Chen | Zendy

Open Access

Enhancement of band-edge emission induced by defect transition in the composite of ZnO nanorods and CdSe/ZnS quantum dots

Author(s) -

Lin-Jie Tzeng,

Chung-Liang Cheng,

Yangfang Chen

Publication year - 2008

Publication title -

optics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.524

H-Index - 272

eISSN - 1071-2763

pISSN - 0146-9592

DOI - 10.1364/ol.33.000569

Subject(s) - nanorod , materials science , band gap , quantum dot , optoelectronics , excited state , semiconductor , wide bandgap semiconductor , nanocomposite , photoluminescence , excitation , optics , nanotechnology , atomic physics , physics , quantum mechanics

A new and general approach to enhance band-edge emission at the expense of defect emission in a semiconductor nanocomposite is proposed. The underlying mechanism is based on the resonance effect between defect transition and band-to-band excitation and transfer of excited electrons between conduction band edges. With our approach, it is possible to convert defect loss into bandgap emission. As an example, we demonstrate that the bandgap emission of ZnO nanorods can be enhanced by as much as 30 times when they are compounded with CdSe/ZnS nanoparticles.

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