Sequence influence of nonidentical InGaAsP quantum wells on broadband characteristics of semiconductor optical amplifiers–superluminescent diodes | Zendy

ChingFuh Lin | Zendy; Bing-Ruey Wu | Zendy; Lih-Wen Laih | Zendy; TienTsorng Shih | Zendy

Open Access

Sequence influence of nonidentical InGaAsP quantum wells on broadband characteristics of semiconductor optical amplifiers–superluminescent diodes

Author(s) -

ChingFuh Lin,

Bing-Ruey Wu,

Lih-Wen Laih,

TienTsorng Shih

Publication year - 2001

Publication title -

optics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.524

H-Index - 272

eISSN - 1071-2763

pISSN - 0146-9592

DOI - 10.1364/ol.26.001099

Subject(s) - optical amplifier , broadband , superluminescent diode , optoelectronics , optics , quantum well , materials science , diode , amplified spontaneous emission , semiconductor laser theory , semiconductor , amplifier , spontaneous emission , optical communication , physics , laser , cmos

Extremely broadband emission is obtained from semiconductor optical amplifiers-superluminescent diodes with nonidentical quantum wells made of InGaAsP/InP materials. The well sequence is experimentally shown to have a significant influence on the emission spectra. With the three In(0.67) Ga(0.33) As(0.72) P(0.28) quantum wells near the n -cladding layer and the two In(0.53) Ga(0.47) As quantum wells near the p -cladding layer, all bounded by In(0.86) Ga(0.14) As(0.3)P(0.7) barriers, the emission spectrum could cover from less than 1.3 to nearly 1.55 microm, and the FWHM could be near 300 nm.

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