InGaAs/GaAs multiquantum-well electroabsorption modulator with integrated waveguide | Zendy

Utpal Das | Zendy; Paul R. Berger | Zendy; P. Bhattacharya | Zendy

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InGaAs/GaAs multiquantum-well electroabsorption modulator with integrated waveguide

Author(s) -

Utpal Das,

Paul R. Berger,

P. Bhattacharya

Publication year - 1987

Publication title -

optics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.524

H-Index - 272

eISSN - 1071-2763

pISSN - 0146-9592

DOI - 10.1364/ol.12.000820

Subject(s) - materials science , optoelectronics , molecular beam epitaxy , gallium arsenide , optics , optical modulator , photodiode , modulation (music) , waveguide , insertion loss , quantum well , laser , epitaxy , layer (electronics) , phase modulation , physics , phase noise , acoustics , composite material

A monolithically integrated guided-wave modulator has been realized by using molecular-beam epitaxial regrowth and ion-milling techniques. The guiding and modulating regions consist, respectively, of In-doped GaAs and GaAs/In(0.34)Ga(0.66)As strained-layer multiquantum wells. Modulation is achieved by field-enhanced electroabsorption in the multiquantum wells. The insertion loss of the modulator is 0.9 dB, and the transmission loss in the guides is </=1 dB/cm. The temporal response of similar GaAs/InGaAs as-grown photodiodes to pulsed laser excitation is characterized by a rise time of 115 psec.

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