Omnidirectional whispering-gallery-mode lasing in GaN microdisk obtained by selective area growth on sapphire substrate | Zendy

Jie’an Jiang | Zendy; Houqiang Xu | Zendy; Moheb Sheikhi | Zendy; Liang Li | Zendy; Zhenhai Yang | Zendy; Jason Hoo | Zendy; Shiping Guo | Zendy; Yuheng Zeng | Zendy; Wei Guo | Zendy; Jichun Ye | Zendy

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Omnidirectional whispering-gallery-mode lasing in GaN microdisk obtained by selective area growth on sapphire substrate

Author(s) -

Jie’an Jiang,

Houqiang Xu,

Moheb Sheikhi,

Liang Li,

Zhenhai Yang,

Jason Hoo,

Shiping Guo,

Yuheng Zeng,

Wei Guo,

Jichun Ye

Publication year - 2019

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.27.016195

Subject(s) - lasing threshold , materials science , whispering gallery wave , sapphire , whispering gallery , photoluminescence , optics , optoelectronics , substrate (aquarium) , gallium nitride , raman spectroscopy , laser , resonator , nanotechnology , wavelength , oceanography , physics , layer (electronics) , geology

The optical properties of hexagonal GaN microdisk arrays grown on sapphire substrates by selective area growth (SAG) technique were investigated both experimentally and theoretically. Whispering-gallery-mode (WGM) lasing is observed from various directions of the GaN pyramids collected at room temperature, with the dominant lasing mode being Transverse-Electric (TE) polarized. A relaxation of compressive strain in the lateral overgrown region of the GaN microdisk is illustrated by photoluminescence (PL) mapping and Raman spectroscopy. A strong correlation between the crystalline quality and lasing behavior of the GaN microdisks was also demonstrated.

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