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Exploiting defects in TiO2 inverse opal for enhanced photoelectrochemical water splitting
Author(s) -
Rowena Yew,
Siva Krishna Karuturi,
Jiaqin Liu,
Hark Hoe Tan,
Yucheng Wu,
C. Jagadish
Publication year - 2019
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.27.000761
Subject(s) - photocurrent , materials science , water splitting , x ray photoelectron spectroscopy , raman spectroscopy , visible spectrum , dielectric spectroscopy , photocatalysis , absorption (acoustics) , fermi level , optoelectronics , spectroscopy , electron , optics , electrochemistry , electrode , chemical engineering , chemistry , catalysis , physics , biochemistry , composite material , quantum mechanics , engineering
In this work, we report on defects generation in TiO 2 inverse opal (IO) nanostructures by electrochemical reduction in order to increase photocatalytic activity and improve photoelectrochemical (PEC) water splitting performance. Macroporous structures, such as inverse opals, have attracted a lot of attention for energy-related applications because of their large surface area, interconnected pores, and ability to enhance light-matter interaction. Photocurrent density of electrochemically reduced TiO 2 -IO increased by almost 4 times, compared to pristine TiO 2 -IO photoelectrodes. Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) analyses confirm the presence of oxygen vacancies in electrochemically reduced TiO 2 -IO photoelectrodes. Oxygen vacancies extend the absorption of TiO 2 from the UV to visible region. The incident photon-to-current efficiency (IPCE) increased by almost 3 times in the absorption (UV) region of TiO 2 and slightly in the visible region. Impedance studies show improved electrical conductivity, longer photogenerated electron lifetime, and a negative shift of the flatband potential, which are attributed to oxygen vacancies acting as electron donors. The Fermi level shifts to be closer to the conduction band edge of TiO 2 -IO.

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