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The demonstration of a color display metasurface on a 12-inch silicon wafer with critical dimension (CD) below 100 nm by complementary metal-oxide semiconductor (CMOS) compatible technology is reported for the first time. The 193 nm ArF deep UV immersion lithography is leveraged instead of electron beam lithography (EBL) to pattern the metasurface, which greatly improves the efficiency while keeping a high resolution. The demonstrated metasurface successfully generates the resonant modes and reflects the lights at resonance wavelengths, giving its display in red, green, and blue (RGB) colors. The wafer-level uniformities of CD and reflection characteristic of the metasurface are measured and analyzed. The experimental data show that they are well controlled in the fabrication process. The work provides a promising route towards mass production of dielectric metasurfaces.

Demonstration of color display metasurfaces via immersion lithography on a 12-inch silicon wafer