Forward bias operation of silicon photonic Mach Zehnder modulators for RF applications
Author(s) -
Rui Lin Chao,
Jin Shi,
Aditya Jain,
Takako Hirokawa,
Akhilesh S. P. Khope,
Clint L. Schow,
John E. Bowers,
Roger Helkey,
James F. Buckwalter
Publication year - 2017
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.25.023181
Subject(s) - spurious free dynamic range , optics , radio frequency , dc bias , photonics , narrowband , dynamic range , mach–zehnder interferometer , noise figure , physics , biasing , materials science , optoelectronics , telecommunications , interferometry , computer science , amplifier , cmos , quantum mechanics , voltage
In this paper, we demonstrate that forward bias (+0.9V) of a high-speed silicon (Si) optical Mach-Zehnder modulator (MZM) increases the radio-frequency (RF) link gain by 30 dB when compared to reverse bias operation (-8V). RF applications require tunable, narrowband electro-optic conversion with high gain to mitigate noise of the optical receiver and realize high RF spur-free dynamic range. Compared to reverse bias, the forward bias gain rolls off more rapidly but offers higher RF link gain improvement of more than 13.2 dB at 20 GHz. Furthermore, forward bias is shown to result in comparable spurious-free dynamic range (SFDR: 104.5 dB.Hz 2/3 ). We demonstrate through an analytical dc transfer curve the existence of simultaneous high gain and OIP3 and verify the theoretical results with measurement under forward bias at a bias point of around +0.9 V.
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