Plasmon-enhanced LT-GaAs/AlAs heterostructure photoconductive antennas for sub-bandgap terahertz generation | Zendy

Afshin Jooshesh | Zendy; Faezeh Fesharaki | Zendy; Vahid Bahrami-Yekta | Zendy; Mahsa Mahtab | Zendy; T. Tiedje | Zendy; Thomas E. Darcie | Zendy; Reuven Gordon | Zendy

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Plasmon-enhanced LT-GaAs/AlAs heterostructure photoconductive antennas for sub-bandgap terahertz generation

Author(s) -

Afshin Jooshesh,

Faezeh Fesharaki,

Vahid Bahrami-Yekta,

Mahsa Mahtab,

T. Tiedje,

Thomas E. Darcie,

Reuven Gordon

Publication year - 2017

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.25.022140

Subject(s) - materials science , optoelectronics , terahertz radiation , photoconductivity , heterojunction , gallium arsenide , photocurrent , plasmon , optics , band gap , layer (electronics) , physics , nanotechnology

Photocurrent generation in low-temperature-grown GaAs (LT-GaAs) has been significantly improved by growing a thin AlAs isolation layer between the LT-GaAs layer and semi-insulating (SI)-GaAs substrate. The AlAs layer allows greater arsenic incorporation into the LT-GaAs layer, prevents current diffusion into the GaAs substrate, and provides optical back-reflection that enhances below bandgap terahertz generation. Our plasmon-enhanced LT-GaAs/AlAs photoconductive antennas provide 4.5 THz bandwidth and 75 dB signal-to-noise ratio (SNR) under 50 mW of 1570 nm excitation, whereas the structure without the AlAs layer gives 3 THz bandwidth, 65 dB SNR for the same conditions.

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