Light absorption enhancement in Ge nanomembrane and its optoelectronic application | Zendy

Munho Kim | Zendy; Shih-Chia Liu | Zendy; Tong June Kim | Zendy; Jaeseong Lee | Zendy; JungHun Seo | Zendy; Weidong Zhou | Zendy; Zhenqiang Ma | Zendy

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Light absorption enhancement in Ge nanomembrane and its optoelectronic application

Author(s) -

Munho Kim,

Shih-Chia Liu,

Tong June Kim,

Jaeseong Lee,

JungHun Seo,

Weidong Zhou,

Zhenqiang Ma

Publication year - 2016

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.24.016894

Subject(s) - materials science , attenuation coefficient , absorption (acoustics) , optoelectronics , optics , wavelength , germanium , photodetector , semiconductor , visible spectrum , silicon , physics , composite material

In this study, the light absorption property of Ge nanomembrane (Ge NM), which incorporates hydrogen (H), in near-infrared (NIR) wavelength range was analyzed. Due to the presence of a large amount of structural defects, the light absorption coefficient of the Ge layer becomes much higher (10 times) than that of bulk Ge in the wavelength range of 1000 ~1600 nm. Increased light absorption was further measured from released Ge NM that has H incorporation in comparison to that of bulk Ge, proving the enhanced light absorption coefficient of H incorporated Ge. Finally, metal-semiconductor-metal (MSM) photodetectors were demonstrated using the H incorporated Ge on GeOI.

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