Open AccessHigh-performance InGaN-based green light-emitting diodes with quaternary InAlGaN/GaN superlattice electron blocking layer
Author(s) -
An-Jye Tzou,
Da-Wei Lin,
Chien-Rong Yu,
Zhen-Yu Li,
Yu-Kuang Liao,
Bingcheng Lin,
Jhih-Kai Huang,
ChienChung Lin,
Tsung Sheng Kao,
HaoChung Kuo,
Chun–Yen Chang
Publication year - 2016
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.24.011387
Subject(s) - light emitting diode , materials science , optoelectronics , voltage droop , superlattice , diode , quantum efficiency , quantum well , band diagram , optics , voltage , laser , band gap , physics , quantum mechanics , voltage divider
In this study, high-performance InGaN-based green light-emitting diodes (LEDs) with a quaternary InAlGaN/GaN superlattice electron blocking layer (QSL-EBL) have been demonstrated. The band structural simulation was employed to investigate the electrostatic field and carriers distribution, show that the efficiency and droop behavior can be intensively improved by using a QSL-EBL in LEDs. The QSL-EBL structure can reduce the polarization-related electrostatic fields in the multiple quantum wells (MQWs), leading to a smoother band diagram and a more uniform carriers distribution among the quantum wells under forward bias. In comparison with green LEDs with conventional bulk-EBL structure, the light output power of LEDs with QSL-EBL was greatly enhanced by 53%. The efficiency droop shows only 30% at 100 A/cm 2 comparing to its peak value, suggesting that the QSL-EBL LED is promising for future white lighting with high performance.
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