Optical properties of highly polarized InGaN light-emitting diodes modified by plasmonic metallic grating | Zendy

Hong Chen | Zendy; Houqiang Fu | Zendy; Zhijian Lu | Zendy; Xuanqi Huang | Zendy; Yuji Zhao | Zendy

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Optical properties of highly polarized InGaN light-emitting diodes modified by plasmonic metallic grating

Author(s) -

Hong Chen,

Houqiang Fu,

Zhijian Lu,

Xuanqi Huang,

Yuji Zhao

Publication year - 2016

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.24.00a856

Subject(s) - light emitting diode , materials science , optoelectronics , quantum efficiency , grating , optics , finite difference time domain method , indium gallium nitride , plasmon , surface plasmon , diode , polarization (electrochemistry) , diffraction grating , quantum well , laser , physics , chemistry

We implement finite-difference time-domain (FDTD) method to simulate the optical properties of highly polarized InGaN light emitting diodes (LEDs) coupled with metallic grating structure. The Purcell factor (Fp), light extraction efficiency (LEE), internal quantum efficiency (IQE), external quantum efficiency (EQE), and modulation frequency are calculated for different polarized emissions. Our results show that light polarization has a strong impact on Fp and LEE of LEDs due to their coupling effects with the surface plasmons (SPs) generated by metallic grating. Fp as high as 34 and modulation frequency up to 5.4 GHz are obtained for a simulated LED structure. Furthermore, LEE, IQE and EQE can also be enhanced by tuning the coupling between polarized emission and SPs. These results can serve as guidelines for the design and fabrication of high efficiency and high speed LEDs for the applications of solid-state lighting and visible-light communication.

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