Terahertz field enhancement in asymmetric and tapered nano-gaps | Zendy

Sanghoon Han | Zendy; YoungMi Bahk | Zendy; Namkyoo Park | Zendy; DaiSik Kim | Zendy

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Terahertz field enhancement in asymmetric and tapered nano-gaps

Author(s) -

Sanghoon Han,

YoungMi Bahk,

Namkyoo Park,

DaiSik Kim

Publication year - 2016

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.24.002065

Subject(s) - terahertz radiation , materials science , optics , field (mathematics) , nano , capacitor , optoelectronics , physics , voltage , composite material , mathematics , quantum mechanics , pure mathematics

We investigate field enhancement inside metal-insulator-metal gaps with asymmetric thicknesses and tapered shapes in the terahertz regime. Finite-difference time-domain simulations were conducted for calculation of field enhancement factor. The calculation indicates that for asymmetric sample, field enhancement increases proportionally with the decrease of the thinner of the two metal film thicknesses surrounding the gap. Concomitantly, angle variation has little effect on the field enhancement if the thickness of the narrowest gap region is fixed. A model based on the capacitor concept is proposed for intuitive understanding of the phenomena.

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