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High-peak-power optically-pumped AlGaInAs eye-safe laser with a silicon wafer as an output coupler: comparison between the stack cavity and the separate cavity
Author(s) -
C. P. Wen,
P. H. Tuan,
H. C. Liang,
C. H. Tsou,
K. W. Su,
K. F. Huang,
YihFan Chen
Publication year - 2015
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.23.030749
Subject(s) - materials science , wafer , optics , stack (abstract data type) , output coupler , laser , optoelectronics , silicon , resonator , physics , computer science , programming language
An intrinsic silicon wafer is exploited as an output coupler to develop a high-peak-power optically-pumped AlGaInAs laser at 1.52 μm. The gain chip is sandwiched with the diamond heat spreader and the silicon wafer to a stack cavity. It is experimentally confirmed that not only the output stability but also the conversion efficiency are considerably enhanced in comparison with the separate cavity in which the silicon wafer is separated from other components. The average output power obtained with the stack cavity was 2.02 W under 11.5 W average pump power, corresponding to an overall optical-to-optical efficiency of 17.5%; the slope efficiency was 18.6%. The laser operated at 100 kHz repetition rate and the pulse peak power was 0.4 kW.

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