Low-voltage high-speed coupling modulation in silicon racetrack ring resonators | Zendy

Rui Yang | Zendy; Linjie Zhou | Zendy; Haike Zhu | Zendy; Jianping Chen | Zendy

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Low-voltage high-speed coupling modulation in silicon racetrack ring resonators

Author(s) -

Rui Yang,

Linjie Zhou,

Haike Zhu,

Jianping Chen

Publication year - 2015

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.23.028993

Subject(s) - phase shift keying , optics , modulation (music) , resonator , physics , phase modulation , voltage , interferometry , keying , materials science , electro optic modulator , optoelectronics , bit error rate , optical modulator , electrical engineering , phase noise , engineering , channel (broadcasting) , quantum mechanics , acoustics

We demonstrate a low-voltage high-speed modulator based on a silicon racetrack resonator with a tunable Mach-Zehnder interferometer coupler. Both static measurement and dynamic modulation experiment are carried out. The 3-dB electro-optic bandwidth is measured to be >30 GHz beyond the limit by the cavity photon lifetime. A 32 Gb/s on-off keying (OOK) modulation is realized under a peak-to-peak drive voltage as low as 0.4 V, and a 28 Gb/s binary phase-shift-keying (BPSK) modulation is realized with a drive voltage of 3 V. The low drive voltages results in low energy consumptions of ~13.3 fJ/bit and ~1.2 pJ/bit for OOK and BPSK modulations, respectively.

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