Growth and characterization of SiGeSn quantum well photodiodes | Zendy

Inga A. Fischer | Zendy; Torsten Wendav | Zendy; Lion Augel | Zendy; Songchai Jitpakdeebodin | Zendy; Filipe Oliveira | Zendy; A. Benedetti | Zendy; Stefan Stefanov | Zendy; S. Chiussi | Zendy; Giovanni Capellini | Zendy; Kurt Busch | Zendy; Jörg Schulze | Zendy

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Growth and characterization of SiGeSn quantum well photodiodes

Author(s) -

Inga A. Fischer,

Torsten Wendav,

Lion Augel,

Songchai Jitpakdeebodin,

Filipe Oliveira,

A. Benedetti,

Stefan Stefanov,

S. Chiussi,

Giovanni Capellini,

Kurt Busch,

Jörg Schulze

Publication year - 2015

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.23.025048

Subject(s) - responsivity , optoelectronics , fabrication , photodiode , materials science , diode , electroluminescence , quantum well , optics , characterization (materials science) , quantum efficiency , doping , photodetector , physics , laser , nanotechnology , medicine , alternative medicine , pathology , layer (electronics)

We report on the fabrication and electro-optical characterization of SiGeSn multi-quantum well PIN diodes. Two types of PIN diodes, in which two and four quantum wells with well and barrier thicknesses of 10 nm each are sandwiched between B- and Sb-doped Ge-regions, were fabricated as single-mesa devices, using a low-temperature fabrication process. We discuss measurements of the diode characteristics, optical responsivity and room-temperature electroluminescence and compare with theoretical predictions from band structure calculations.

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