Enabling area-selective potential-energy engineering in InGaN/GaN quantum wells by post-growth intermixing | Zendy

Chao Shen | Zendy; Tien Khee Ng | Zendy; Boon S. Ooi | Zendy

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Enabling area-selective potential-energy engineering in InGaN/GaN quantum wells by post-growth intermixing

Author(s) -

Chao Shen,

Tien Khee Ng,

Boon S. Ooi

Publication year - 2015

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.23.007991

Subject(s) - materials science , quantum well , light emitting diode , optoelectronics , nitride , photonics , diode , quantum efficiency , gallium nitride , dielectric , optics , nanotechnology , laser , layer (electronics) , physics

We report on a unique area-selective, post-growth approach in engineering the quantum-confined potential-energy profile of InGaN/GaN quantum wells (QWs) utilizing metal/dielectric-coating induced intermixing process. This led to simultaneous realization of adjacent regions with peak emission of 2.74 eV and 2.82 eV with a high spatial resolution (~1 μm) at the coating boundary. The potential profile softening in the intermixed QW light-emitting diode (LED) was experimentally and numerically correlated, shedding light on the origin of alleviated efficiency droop from 30.5% to 16.6% (at 150 A/cm²). The technique is advantageous for fabricating high efficiency light-emitters, and is amenable to monolithic integration of nitride-based photonic devices.

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