Efficiency dip observed with InGaN-based multiple quantum well solar cells | Zendy

KunYu Lai | Zendy; G. J. Lin | Zendy; YuhRenn Wu | Zendy; Meng-Lun Tsai | Zendy; JrHau He | Zendy

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Efficiency dip observed with InGaN-based multiple quantum well solar cells

Author(s) -

KunYu Lai,

G. J. Lin,

YuhRenn Wu,

Meng-Lun Tsai,

JrHau He

Publication year - 2014

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.22.0a1753

Subject(s) - quantum efficiency , photocurrent , quantum confined stark effect , optoelectronics , indium , spontaneous emission , radiative transfer , materials science , optics , indium gallium nitride , solar cell efficiency , physics , quantum well , solar cell , laser

The dip of external quantum efficiency (EQE) is observed on In(0.15)Ga(0.85)N/GaN multiple quantum well (MQW) solar cells upon the increase of incident optical power density. With indium composition increased to 25%, the EQE dip becomes much less noticeable. The composition dependence of EQE dip is ascribed to the competition between radiative recombination and photocurrent generation in the active region, which are dictated by quantum-confined Stark effect (QCSE) and composition fluctuation in the MQWs.

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